80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 16, Issue 10, 2004, Pages 2209-2211

  Lauer, C ^a   Ortsiefer, M ^b   Shau, R ^a   Rosskopf, J ^b   Bohm G ^a   Ronneberg E ^b   Kohler F ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b VERTILAS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; HEAT SINKS; LIGHT EMISSION; MIRRORS; OPTICAL PUMPING; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

CONTINUOUS WAVE OPERATION; EMISSION WAVELENGTHS; HIGH RESOLUTION X RAY DIFFRACTION; INDIUM GALLIUM ALUMINUM ARSENIDE; OPTICAL CONFINEMENT; SELF ADJUSTED LATERAL CURRENT; STRAINED QUANTUM WELLS; TRACE GAS SENSING; TUNABLE DIODE LASER ABSORPTION SPECTROSCOPY; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

CONTINUOUS WAVE LASERS;

EID: 5444230213     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.833929     Document Type: Article

References (10)

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