Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength

Applied Physics Letters

Volumn 72, Issue 24, 1998, Pages 3106-3108

  Mitsuhara, Manabu ^a   Ogasawara, Matsuyuki ^a   Oishi, Mamoru ^a   Sugiura, Hideo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001725823     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121561     Document Type: Article

References (12)

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