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Volumn 42, Issue 5, 1983, Pages 427-429

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

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Indexed keywords


EID: 0344548628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.93952     Document Type: Article
Times cited : (317)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.