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Volumn 42, Issue 5, 1983, Pages 427-429
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Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0344548628
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.93952 Document Type: Article |
Times cited : (317)
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References (22)
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