Theoretical study on transport properties of a BN co-doped SiC nanotube

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 375, Issue 38, 2011, Pages 3382-3385

  Choudhary, Sudhanshu ^a   Qureshi, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Ab initio; DFT; NEGF; SiCNT

Indexed keywords

BORON; BORON CARBIDE; DOPING (ADDITIVES); NITROGEN; SILICON CARBIDE; TRANSPORT PROPERTIES;

AB INITIO; ELECTRONIC TRANSPORT PROPERTIES; EXPONENTIAL CURRENT; IV CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; NEGF; SICNT; SILICON CARBIDE NANOTUBES;

NANOTUBES;

EID: 81155162551     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2011.08.001     Document Type: Article

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