Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 195-197

  Jiang, Y ^a,b   Liow, T Y ^a,b   Singh, Navab ^a   Tan, L H ^a   Lo, Guo Qiang ^a   Chan, Daniel S H ^b   Kwong, Dim Lee ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Gate all around (GAA) silicon nanowire (SiNW); Metallic nanowire (NW) contacts; Sheet resistance; Ultrathin silicide film

Indexed keywords

ELECTRIC RESISTANCE; GALLIUM ALLOYS; MOSFET DEVICES; NICKEL; NICKEL ALLOYS; SHEET RESISTANCE; SILICIDES; TRANSISTORS; ULTRATHIN FILMS;

GATE LENGTHS; GATE-ALL-AROUND (GAA) SILICON NANOWIRE (SINW); METALLIC CONTACTS; METALLIC NANOWIRE (NW) CONTACTS; NANO-WIRE TRANSISTORS; NICKEL SILICIDES; PERFORMANCE IMPROVEMENTS; REFERENCE DEVICES; SOURCE/DRAIN EXTENSIONS; SUB 10 NM; ULTRATHIN SILICIDE FILM;

NANOWIRES;

EID: 59649108602     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2010532     Document Type: Article

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