Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2680-2683

  Ghosh, Kunal ^a   Tracy, Clarence J ^a   Dauksher, Bill ^a   Herasimenka, Stanislau ^a   Honsberg, Christiana ^a   Bowden, Stuart ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; CHARGED STATE; COMMERCIAL SIMULATORS; CRYSTALLINE SILICONS; HETERO INTERFACES; INVERSION LAYER; LATERAL CONDUCTANCE; MEASUREMENT TECHNIQUES; OPTIMIZED DEVICES; SI SOLAR CELLS; SIMULATION RESULT; THEORETICAL MODELS;

COMPUTER SIMULATION; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS;

AMORPHOUS SILICON;

EID: 78650156697     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5617086     Document Type: Conference Paper

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