Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology

Proceedings of the IEEE Conference on Nanotechnology

Volumn , Issue , 2011, Pages 985-990

  Vollebregt, Sten ^a   Ishihara, Ryoichi ^a   Derakhshandeh, Jaber ^a   Van Der Cingel, Johan ^a   Schellevis, Hugo ^a   Beenakker, C I M ^a  

^a Department of Microelectronics   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED CARBON NANOTUBES; ELECTRICAL MEASUREMENT; LIFT-OFF PROCESS; LOW RESISTIVITY; LOW TEMPERATURES; SACRIFICIAL LAYER; SEMICONDUCTOR TECHNOLOGY; SI TECHNOLOGY; SUPPORT LAYER; TUBE DENSITY; VERTICALLY ALIGNED;

CARBON NANOTUBES; NANOTECHNOLOGY; NITRIDES; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SILICON OXIDES;

TEMPERATURE;

EID: 84858980430     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2011.6144393     Document Type: Conference Paper

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