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Volumn 9, Issue 3-4, 2012, Pages 830-833
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Broadening of photoluminescence for inhomogeneous polar and non-polar InGaN/GaN quantum wells
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Author keywords
GaN; Inhomogeneous broadening; Photoluminescence; Quantum wells
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Indexed keywords
BARRIER WIDTHS;
BUILT-IN ELECTRIC FIELDS;
GAN;
HOMOGENEOUS BROADENING;
INDIUM CONCENTRATION;
INGAN/GAN QUANTUM WELL;
INHOMOGENEITIES;
INHOMOGENEOUS BROADENING;
LOW TEMPERATURE PHOTOLUMINESCENCE;
MEAN VALUES;
NON-POLAR;
PL SPECTRA;
ELECTRIC FIELDS;
GALLIUM NITRIDE;
INDIUM;
PHOTOLUMINESCENCE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 84858837625
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201100474 Document Type: Article |
Times cited : (6)
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References (14)
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