Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Thin Solid Films

Volumn 520, Issue 10, 2012, Pages 3787-3790

  Ide, Keisuke ^a   Kikuchi, Yutomo ^a   Nomura, Kenji ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

a IGZO; Amorphous oxide semiconductor; Oxygen atom; Ozone annealing; Thin film transistor

Indexed keywords

A-IGZO; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); ANNEALED FILMS; CHEMICAL COMPOSITIONS; DIFFUSION CONSTANT; FREE-ELECTRON DENSITY; IN-GA-ZN-O; LOW TEMPERATURE ANNEALING; LOW TEMPERATURES; LOW-TEMPERATURE PROCESS; OPERATION CHARACTERISTIC; OXIDATION POWER; OXYGEN ATOM; PHOTOEMISSION SPECTRA; SATURATION MOBILITY; SUBTHRESHOLD; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS; VOLTAGE SWINGS;

ELECTRONS; GALLIUM; OZONE; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC;

ANNEALING;

EID: 84858334606     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.062     Document Type: Conference Paper

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