Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 3 PART 2, 2012, Pages 655-659

  Thian, Mury ^a   Fusco, Vincent F ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

60 GHz; Absorptive; balanced circuits; current steering; heterojunction bipolar transistor (HBT); insertion loss; integrated circuit (IC); isolation; mm wave; rise time; silicon germanium (SiGe); single pole double throw (SPDT); switches; switching speed; transistor circuits; V band

Indexed keywords

60 GHZ; ABSORPTIVE; CURRENT STEERING; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); INTEGRATED CIRCUIT (IC); ISOLATION; MM-WAVE; RISETIMES; SILICON GERMANIUM (SIGE); SINGLE-POLE DOUBLE-THROW (SPDT); SWITCHING SPEED; TRANSISTOR CIRCUITS; V-BAND;

HETEROJUNCTION BIPOLAR TRANSISTORS; INSERTION LOSSES; POLES; SWITCHES;

SILICON ALLOYS;

EID: 84858155076     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2180395     Document Type: Article

References (9)

1. C. Wang and V. F. Fusco, "Reduced architecture V-band transmitter," IET Microw. Antennas Propag., vol. 4, no. 11, pp. 1948-1954, Nov. 2010.
2. S.-K. Yong, P. Xia, and A. V. Garcia, 60 GHz Technology for Gbps WLAN and WPAN: From Theory to Practice. Chichester, U.K.: Wiley, 2011.
3. M. Uzunkol and G. M. Rebeiz, "A low-loss 50-70 GHz SPDT switch in 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 45, no. 10, pp. 2003-2007, Oct. 2010.
4. M. Racanelli, S. Voinegescu, and P. Kempf, "High performance SiGe BiCMOS technology," in Proc. IEEE/ACES Int. Conf. Wireless Communications and Applied Computational Electromagnetics, Honolulu, HI, Apr. 2005, pp. 430-434.
5. I. Gresham and A. Jenkins, "A fast switching, high isolation absorptive SPST SiGe switch for 24 GHz automotive applications," in Proc. Eur. Microw. Conf., Munich, Germany, Oct. 2003, pp. 903-906.
6. T. M. Hancock, I. Gresham, and G. M. Rebeiz, "A differential subnanosecond high-isolation absorptive active SiGe 24 GHz switch for UWB applications," in Proc. IEEE Radio Frequency Integrated Circuits Symp., Fort Worth, TX, Jun. 2004, pp. 497-500.
7. T.M. Hancock and G.M. Rebeiz, "Design and analysis of a 70-ps SiGe differential RF switch," IEEE Trans. Microw. Theory Tech., vol. 53, no. 7, pp. 2403-2410, Jul. 2005.
8. M. Gordon and S. P. Voinigescu, "An inductor-based 52-GHz 0.18 m SiGe HBT cascode LNA with 22 dB gain," in Proc. ESSCIRC, Leuven, Belgium, Sep. 2004, pp. 287-290.
9. J. Böck, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M.Wurzer,W. Perndl, T. Böttner, and T. F.Meister, "SiGe bipolar technology for automotive radar applications," in Proc. IEEE Bipolar/BiCMOS Circuits Technology Meeting, Montreal, QC, Canada, Sep. 2004, pp. 84-87.