A fast switching, high isolation absorptive SPST SiGe switch for 24GHz automotive applications

Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

Volumn 3, Issue , 2003, Pages 903-906

  Gresham, Ian ^a   Jenkins, Alan ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ALLOYS;

AUTOMOTIVE APPLICATIONS; BIASING SCHEME; CARRIER FREQUENCY; CONSTANT CURRENT; HIGH ISOLATION; INPUT AND OUTPUTS; INPUT REFLECTION COEFFICIENT; MEASURED RESULTS;

QUANTUM ENTANGLEMENT;

EID: 83555162392     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2003.177626     Document Type: Conference Paper

References (6)

1. K. -Etiinger et al., "Single-Chip 20GHz VCO and Frequency Divider in SiGe Technology", IEEE MTT-S Int. Microwave Symp. Dig, June 2002.
2. G. Schuppener, "A 23GHz Low-Noise Amplifier in SiGe Helerojunction Bipolar Technology", IEEE MTT-S Int. Microwave Symp. Dig., May 2001.
3. S. Hackl et al., "40GHz Monolithic Integrated Mixer in SiGe Technology", IEEE MTT-S Int. Microwave Symp. Dig., June 2002.
4. G. Ritzberger et al., "45GHz Highly Integrated Phase-Locked Loop Frequency Synthesiser in SiGe Bipolar Technology", IEEE MTT-S Int. Microwave Symp. Dig., June 2002.
5. H. Knapp et al., "36GHz Dual-Modulus Prescalar in SiGe Bipolar Technology", IEEE MTT-S RFIC Symp. Dig., June 2002.
6. Federal Communications Commission FCC 02-48, Section 15.515, 15.521.