A differential sub-nanosecond high-isolation absorptive active SiGe 24 GHz switch for UWB applications

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2004, Pages 497-500

  Hancock, Timothy M ^a   Gresham, Ian ^b   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b M/A COM   (United States)

Author keywords

Pulsed Radar; RF switches; RFIC; Silicon germanium (SiGe); Ultrawideband (UWB)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; PARAMETER ESTIMATION; SILICON COMPOUNDS; SWITCHING; TOPOLOGY;

PULSED RADAR; RF SWITCHES; SILICON GERMANIUM (SIGE); ULTRAWIDEBAND (UWB);

NANOTECHNOLOGY;

EID: 4444292764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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