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Volumn 2005, Issue , 2005, Pages 430-434

High performance SiGe BiCMOS technology

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33745004652     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCACEM.2005.1469617     Document Type: Conference Paper
Times cited : (6)

References (10)
  • 1
    • 84858938818 scopus 로고    scopus 로고
    • International SEMATECH, Austin, Texas
    • 2003 ITRS, International SEMATECH, Austin, Texas, http://public.itrs.net/ Files/2003ITRS/Home2003.htm.
    • 2003 ITRS
  • 2
    • 33747211070 scopus 로고    scopus 로고
    • SiGe BiCMOS technology for RF circuits
    • to be published in
    • M. Racanelli et al. "SiGe BiCMOS Technology for RF Circuits", to be published in Trans. Electr. Dev.
    • Trans. Electr. Dev.
    • Racanelli, M.1
  • 4
    • 33745000886 scopus 로고    scopus 로고
    • Sept.
    • M. Racanelli, et al., CICC Proc., pp.331-334, Sept. 2003.
    • (2003) CICC Proc. , pp. 331-334
    • Racanelli, M.1
  • 8
    • 33749392936 scopus 로고    scopus 로고
    • IEEE CSICS, Monterey, CA, Oct.
    • A. Hazneci et al., IEEE CSICS, Monterey, CA, Technical Digest, pp. 101-104, Oct.2004.
    • (2004) Technical Digest , pp. 101-104
    • Hazneci, A.1
  • 9
    • 33749392936 scopus 로고    scopus 로고
    • IEEE CSICS, Monterey, CA, Oct.
    • C. Lee, et al., IEEE CSICS, Monterey, CA, Technical Digest, pp. 179-182, Oct. 2004.
    • (2004) Technical Digest , pp. 179-182
    • Lee, C.1
  • 10
    • 33747308543 scopus 로고    scopus 로고
    • M. Gordon et al., IEEE ESSCIRC, Leuven, Belgium
    • M. Gordon et al., IEEE ESSCIRC, Leuven, Belgium.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.