Oxygen transport from a silica crucible in Czochralski silicon growth

Journal of Crystal Growth

Volumn 165, Issue 4, 1996, Pages 362-371

  Togawa, Shinji ^a,b   Izunome, Koji ^a   Kawanishi, Soroku ^a   Chung, Sang Ik ^a   Terashima, Kazutaka ^a,c   Kimura, Shigeyuki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Komatsu Electronic Metals Co Ltd   (Japan)

^c SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; DISSOLUTION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LIQUID METALS; OXYGEN; SILICA; SILICON; TRANSPORT PROPERTIES;

GROWTH INTERFACE; SILICA CRUCIBLE; SILICON MELT;

CRYSTAL GROWTH FROM MELT;

EID: 0030564755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00211-4     Document Type: Article

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