Lasing threshold doubling at the crossover from strong to weak coupling regime in GaAs microcavity

New Journal of Physics

Volumn 14, Issue , 2012, Pages

  Tsotsis, P ^a,b   Eldridge, P S ^b   Gao, T ^a,b   Tsintzos, S I ^b   Hatzopoulos, Z ^a,b   Savvidis, P G ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY INJECTED; GAAS; LASING THRESHOLD; LOW TEMPERATURES; LOW THRESHOLDS; LOW-ENERGY STATE; MONOCHROMATIC LIGHT; NONRESONANT; ORDERS OF MAGNITUDE; POLARITON LASER; POLARITONS; POPULATION INVERSIONS; PUMPING CONDITION; REGIME TRANSITION; ROOM TEMPERATURE; STRONG-COUPLING REGIME; TEMPERATURE DEPENDENCE; TEMPERATURE-INDUCED; THERMALIZATION; WAVE VECTOR; WEAK-COUPLING REGIME;

GALLIUM ARSENIDE; LIGHT EMITTING DIODES; MICROCAVITIES; OPTICAL PUMPING; PHONONS; PHOTONS; QUANTUM THEORY;

SEMICONDUCTING GALLIUM;

EID: 84857977930     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/14/2/023060     Document Type: Article

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