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Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

Room temperature GaAs exciton-polariton light emitting diode

(5) Tsintzos, S I a,b Savvidis, P G a,b Deligeorgis, G b Hatzopoulos, Z a Pelekanos, N T a,b

a UNIVERSITY OF CRETE (Greece)

b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHONONS; PHOTONS; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM;

ANTICROSSING BEHAVIORS; ELECTRICAL INJECTIONS; EXCITON-POLARITON; GAAS; LIGHT EMITTING DIODE LEDS; POLARITON; POLARITON EMISSIONS; QUANTUM WELLS; RABI-SPLITTING; ROOM TEMPERATURES; STRONG-COUPLING REGIMES;

QUANTUM THEORY;

EID: 60749092864 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3082093 Document Type: Article

Times cited : (44)

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