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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 20, 2002, Pages 2053101-2053109

Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities

(10) Butte R a Delalleau, G a Tartakovskii, A I a Skolnick, M S a Astratov, V N a Baumberg, J J b Malpuech, G c,d Di Carlo, A c Kavokin, A V d Roberts, J S a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY OF SOUTHAMPTON (United Kingdom)

c UNIVERSITY OF ROME TOR VERGATA (Italy)

d UNIVERSITÉ BLAISE PASCAL (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CONCENTRATION (PARAMETERS); ENERGY; EXCITATION; FLAME PHOTOMETRY; KINETICS; PHOTON EMISSION TOMOGRAPHY; SEMICONDUCTOR;

EID: 0037095378 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.205310 Document Type: Article

Times cited : (108)

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