Polariton lasing vs. photon lasing in a semiconductor microcavity

Proceedings of the National Academy of Sciences of the United States of America

Volumn 100, Issue 26, 2003, Pages 15318-15323

  Deng, Hui ^a   Weihs, Gregor ^a,b   Snoke, David ^c   Bloch, Jacqueline ^d   Yamamoto, Yoshihisa ^a,e  

^a STANFORD UNIVERSITY   (United States)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c UNIVERSITY OF PITTSBURGH   (United States)

^d CNRS   (France)

^e Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOM; DENSITY; ENERGY; LASER; LIGHT; MASS; PHASE TRANSITION; PHOTON; POLARIZATION; POLYMERIZATION; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; TEMPERATURE; VAPOR;

LASERS; MODELS, THEORETICAL; PHOTONS; SEMICONDUCTORS;

EID: 0347364657     PISSN: 00278424     EISSN: None     Source Type: Journal    
DOI: 10.1073/pnas.2634328100     Document Type: Article

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