Passivation characteristics of SiN x/a-Si and SiN x/Si-rich-SiN x stacked layers on crystalline silicon

Solar Energy Materials and Solar Cells

Volumn 100, Issue , 2012, Pages 169-173

  Cham Thi, Trinh ^a   Koyama, Koichi ^a,b   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a,b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Amorphous silicon; Cat CVD; Passivation; Si rich silicon nitride; Solar cell efficiency; Surface recombination velocity

Indexed keywords

A-SI FILMS; A-SI LAYERS; ANNEALING PROCESS; ATOMIC RATIO; CAT-CVD; CATALYTIC CHEMICAL VAPOR DEPOSITION; CRYSTALLINE SILICONS; EXCELLENT PERFORMANCE; HIGH QUALITY; HOT WIRE CVD; PASSIVATION FILM; SOLAR CELL EFFICIENCY; STACKED LAYER; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATION VELOCITY; TRANSPARENT MATERIAL;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; PASSIVATION; SILICON; SILICON NITRIDE;

SILICON WAFERS;

EID: 84857794619     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.01.010     Document Type: Article

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