Origins of silicon solar cell passivation by SiNx:H anneal

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1157-1161

  Boehme, Christoph ^a   Lucovsky, Gerald ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIREFLECTION COATINGS; CHEMICAL BONDS; DIFFUSION; ELECTRONIC PROPERTIES; HYDROGENATION; INTERFACES (MATERIALS); MONOLAYERS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE;

COVALENT BONDING;

SILICON SOLAR CELLS;

EID: 0036530806     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01135-8     Document Type: Article

References (14)

1. Improvement in multicrystalline silicon solar cells after thermal treatment of PECVD silicon nitride AR coating