EIS characterization of the barrier layer formed over Ti during its potentiostatic anodization in 0.1 M HClO 4/x mM HF (1 mM ≤ x ≤ 500mM)

Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

  Acevedo Peña, Próspero ^a   Gonzlez, Ignacio ^a  

^a DEPARTAMENTO DE QUÍMICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AGGRESSIVE MEDIA; ANODIC FILMS; ANODIZATIONS; BARRIER LAYERS; ELECTRICAL EQUIVALENT CIRCUIT; FLUORIDE ION; HF CONCENTRATION; HIGH POTENTIAL; OUTER LAYER; PASSIVE FILMS; POROUS FILM; POTENTIOSTATICS; SEM IMAGE; STEADY-STATE CURRENTS; TI ELECTRODE; VOLTAMMETRIC BEHAVIORS;

ELECTRIC PROPERTIES; METALLIC FILMS; MORPHOLOGY;

OXIDE FILMS;

EID: 84857423370     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.035203jes     Document Type: Article

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