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Volumn 159, Issue 1, 2012, Pages

Band engineering of Ru/rutile-TiO 2/Ru capacitors by doping cobalt to suppress leakage current

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT OXYGEN; BAND ENGINEERING; DOPING ELEMENTS; LEAKAGE CURRENT DENSITYS; RELATIVE PERMITTIVITY; RUTILE PHASE; SCHOTTKY BARRIERS; THEORETICAL EQUATION; THERMIONIC CURRENTS; TIO; TUNNELING CURRENT;

EID: 84857378955     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.040201jes     Document Type: Article
Times cited : (17)

References (20)
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  • 8
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    • Tersoff, J.1
  • 9
    • 0035890648 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.64.205310
    • R. T. Tung, Phys. Rev. B, 64, 205310 (2001). 10.1103/PhysRevB.64.205310
    • (2001) Phys. Rev. B , vol.64 , pp. 205310
    • Tung, R.T.1
  • 14
    • 34548186193 scopus 로고
    • 10.1103/PhysRevB.51.13023
    • S.-D. Mo and W. Y. Ching, Phys. Rev. B, 51, 13023 (1995). 10.1103/PhysRevB.51.13023
    • (1995) Phys. Rev. B , vol.51 , pp. 13023
    • Mo, S.-D.1    Ching, W.Y.2
  • 20
    • 33750149443 scopus 로고    scopus 로고
    • Electronic structure of defect states in hydroxylated and reduced rutile TiO2(110) surfaces
    • DOI 10.1103/PhysRevLett.97.166803
    • C. D. Valentin and G. Pacchioni, Phys. Rev. Lett., 97, 166803 (2006). 10.1103/PhysRevLett.97.166803 (Pubitemid 44601537)
    • (2006) Physical Review Letters , vol.97 , Issue.16 , pp. 166803
    • Di Valentin, C.1    Pacchioni, G.2    Selloni, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.