Atomic hydrogen induced step bunching on high-index GaAs substrates for fabrication of novel quantum wire and quantum dot arrays by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4588-4592

  Nötzel, Richard ^a,b   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

III V semiconductors molecular beam epitaxy step bunching atomic hydrogen quantum wires quantum dots

Indexed keywords

ANISOTROPY; HYDROGEN; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

STEP BUNCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0343878094     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4588     Document Type: Article

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