Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

  Crook, Adam M ^a   Nair, Hari P ^a   Ferrer, Domingo A ^a   Bank, Seth R ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT-FREE; GAAS; GROWTH METHOD; II-IV SEMICONDUCTORS; LAYER-BY-LAYER GROWTH; PLANAR DEFECT; PLASMONIC DEVICES; ROTATIONAL SYMMETRIES;

CRYSTALS; DEFECTS; EPITAXIAL FILMS; EPITAXIAL GROWTH; ERBIUM; GALLIUM ARSENIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOPARTICLES; OHMIC CONTACTS; PLASMONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 80052084557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626035     Document Type: Article

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