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Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

Infrared plasmons on heavily-doped silicon

(4) Ginn, James C a,b Jarecki Jr , Robert L a Shaner, Eric A a Davids, Paul S a

a SANDIA NATIONAL LABORATORIES (United States)

b Plasmonics Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; DRUDE MODELS; LONGWAVE INFRARED; METALLIC BEHAVIORS; OPTICAL CHARACTERISTICS; P-TYPE SI; PLASMA EDGES; SPATIAL CONFINEMENT; SPECTRAL REGION; SUB-WAVELENGTH; SURFACE PLASMONS; SURFACE PLASMONS POLARITONS; THERMAL IR; THERMAL-ANNEALING;

BORON; OPTICAL PROPERTIES; PHOSPHORUS; PLASMA TURBULENCE; PLASMONS; SILICON;

INFRARED RADIATION;

EID: 80052395013 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626050 Document Type: Article

Times cited : (135)

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