InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm

Optics Express

Volumn 20, Issue 4, 2012, Pages 3675-3692

  Jiao, Yuqing ^a,b   Tilma, Bauke W ^a   Kotani, Junji ^a   Nötzel, Richard ^a,c   Smit, Meint K ^a   He, Sailing ^b   Bente, Erwin A J M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ZHEJIANG UNIVERSITY   (China)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; OPTICAL TOMOGRAPHY; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE MATERIAL; ACTIVE-PASSIVE INTEGRATION; ELECTRICAL BANDWIDTH; EQUIVALENT CIRCUIT MODEL; ESCAPE RATE; INAS/INP; LAYER STACKS; OPTICAL COHERENT TOMOGRAPHY; RATE-EQUATION MODELS; RESPONSIVITY; SPECTRAL RESPONSE; SWEPT SOURCE; WAVEGUIDE PHOTODETECTORS; WAVELENGTH RANGES;

PHOTODETECTORS;

EID: 84857295082     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.003675     Document Type: Article

References (38)

1. D. Huang, E. A. Swanson, C. P. Lin, J. S. Schuman, W. G. Stinson, W. Chang, M. R. Hee, T. Flotte, K. Gregory, C. A. Puliafito, "Optical coherence tomography," Science 254(5035), 1178-1181 (1991).
2. S. R. Chinn, E. A. Swanson, and J. G. Fujimoto, "Optical coherence tomography using a frequency-tunable optical source," Opt. Lett. 22(5), 340-342 (1997).
3. M. Choma, M. Sarunic, C. Yang, and J. Izatt, "Sensitivity advantage of swept source and Fourier domain optical coherence tomography," Opt. Express 11(18), 2183-2189 (2003).
4. B. Potsaid, I. Gorczynska, V. J. Srinivasan, Y. Chen, J. Jiang, A. Cable, and J. G. Fujimoto, "Ultrahigh speed spectral / Fourier domain OCT ophthalmic imaging at 70,000 to 312,500 axial scans per second," Opt. Express 16(19), 15149-15169 (2008).
5. J. G. Fujimoto, M. E. Brezinski, G. J. Tearney, S. A. Boppart, B. Bouma, M. R. Hee, J. F. Southern, and E. A. Swanson, "Optical biopsy and imaging using optical coherence tomography," Nat. Med. 1(9), 970-972 (1995).
6. D.-J. Faber, Department of Biomedical Engineering and Physics, Academic Medical Center (AMC), Meibergdreef 9, 1105 AZ Amsterdam, The Netherlands (personal communication, 2007).
7. V. M. Kodach, J. Kalkman, D. J. Faber, and T. G. van Leeuwen, "Quantitative comparison of the OCT imaging depth at 1300 nm and 1600 nm," Biomed. Opt. Express 1(1), 176-185 (2010).
8. B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Nötzel, M. K. Smit, and E. A. J. M. Bente, "Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7μm wavelength region," IEEE J. Quantum Electron. (to be published).
9. D. J. Faber and T. G. v. Leeuwen, "Optical coherence tomography," in Optical-thermal response of laserirradiated tissue, 2nd ed., A. J. Welch and M. J. C. v. Gemert, eds. (Springer, 2011).
10. Thorlabs PDB120 series, http://www.thorlabs.de/newgrouppage9.cfm? objectgroup-id=2151.
11. I. Kimukin, N. Biyikli, B. Butun, O. Aytur, S. M. Unlu, and E. Ozbay, "InGaAs-based high-performance p-i-n photodiodes," IEEE Photon. Technol. Lett. 14(3), 366-368 (2002).
12. H. G. Bach, A. Beling, G. G. Mekonnen, R. Kunkel, D. Schmidt, W. Ebert, A. Seeger, M. Stollberg, and W. Schlaak, "InP-based waveguide-integrated photodetector with 100-GHz bandwidth," IEEE J. Sel. Top. Quantum Electron. 10(4), 668-672 (2004).
13. Y. Zhang, Y. Gu, C. Zhu, G. Hao, A. Li, and T. Liu, "Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors," Infrared Phys. Technol. 47(3), 257-262 (2006).
14. J. Oh, S. Csutak, and C. Campbell, "High-speed interdigitated Ge PIN photodetectors," IEEE Photon. Technol. Lett. 14(3), 369-371 (2002).
15. A. Rogalski and R. Ciupa, "Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes," J. Electron. Mater. 28(6), 630-636 (1999).
16. Thorlabs SIR5 series, http://www.thorlabs.com/NewGroupPage9.cfm? ObjectGroup-ID=1297.
17. Hamamatsu G8423 series, http://sales.hamamatsu.com/index.php?id=13157898.
18. Thorlabs FDG series, http://www.thorlabs.com/NewGroupPage9.cfm? ObjectGroup-ID=2822.
19. Hamamatsu P series, http://jp.hamamatsu.com/products/sensor-ssd/pd128/ pd134/index-en.html.
20. C. Zinoni, B. Alloing, L. H. Li, F. Marsili, A. Fiore, L. Lunghi, A. Gerardino, Y. B. Vakhtomin, K. V. Smirnov, and G. N. Gol'tsman, "Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors," Appl. Phys. Lett. 91(3), 031106 (2007).
21. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector," Appl. Phys. Lett. 73(7), 963-965 (1998).
22. S.-F. Tang, S.-Y. Lin, and S.-C. Lee, "Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector," Appl. Phys. Lett. 78(17), 2428-2430 (2001).
23. B. W. Tilma, M. S. Tahvili, J. Kotani, R. Notzel, M. K. Smit, and E. A. J. M. Bente, "Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers," Opt. Quantum Electron. 41(10), 735-749 (2009).
24. S. Anantathanasarn, R. Notzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and J. H. Wolter, "Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vaporphase epitaxy," Appl. Phys. Lett. 89(7), 073115 (2006).
25. R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E.-J. Geluk, B. Smalbrugge, M. K. Smit, and J. H. Wolter, "Self assembled InAs/InP quantum dots for telecom applications in the 1.55 μm wavelength range: wavelength tuning, stacking, polarization control, and lasing," Jpn. J. Appl. Phys. 45(8B), 6544-6549 (2006).
26. H. Wang, J. Yuan, P. J. van Veldhoven, T. de Vries, B. Smalbrugge, E. J. Geluk, E. A. J. Bente, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Notzel, "Butt joint integrated extended cavity InAs/ InP (100) quantum dot laser emitting around 1.55 μm," Electron. Lett. 44(8), 522-523 (2008).
27. Ultrafast Sensors, http://www.ultrafastsensors.com/Amplifier.htm.
28. Y. C. Xin, Y. Li, A. Martinez, T. J. Rotter, H. Su, L. Zhang, A. L. Gray, S. Luong, K. Sun, Z. Zou, J. Zilko, P. M. Varangis, and L. F. Lester, "Optical gain and absorption of quantum dots measured using an alternative segmented contact method," IEEE J. Quantum Electron. 42(7), 725-732 (2006).
29. L. Yang, D. Dai, B. Yang, Z. Sheng, and S. He, "Characteristic analysis of tapered lens fibers for light focusing and butt-coupling to a silicon rib waveguide," Appl. Opt. 48(4), 672-678 (2009).
30. A. A. Ukhanov, R. H. Wang, T. J. Rotter, A. Stintz, L. F. Lester, P. G. Eliseev, and K. J. Malloy, "Orientation dependence of the optical properties in InAs quantum-dash lasers on InP," Appl. Phys. Lett. 81(6), 981-983 (2002).
31. L. Xu, M. Nikoufard, X. Leijtens, T. de Vries, E. Smalbrugge, R. Notzel, Y. Oei, and M. K. Smit, "Highperformance InP-based photodetector in an amplifier layer stack on semi-insulating substrate," IEEE Photon. Technol. Lett. 20(23), 1941-1943 (2008).
32. K. Kato, S. Hata, K. Kawano, J. Yoshida, and A. Kozen, "A high-efficiency 50 GHz InGaAs multimode waveguide photodetector," IEEE J. Quantum Electron. 28(12), 2728-2735 (1992).
33. M. Sugawara, K. Mukai, Y. Nakata, H. Ishikawa, and A. Sakamoto, "Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1-xAs/GaAs quantum dot lasers," Phys. Rev. B 61(11), 7595-7603 (2000).
34. M. Gioannini, A. Sevega, and I. Montrosset, "Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers," Opt. Quantum Electron. 38(4-6), 381-394 (2006).
35. H. Jiang and P. K. L. Yu, "Equivalent circuit analysis of harmonic distortions in photodiode," IEEE Photon. Technol. Lett. 10(11), 1608-1610 (1998).
36. J. Kotani, P. J. van Veldhoven, T. de Vries, B. Smalbrugge, E. A. J. M. Bente, M. K. Smit, and R. Notzel, "First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state," Electron. Lett. 45(25), 1317-1318 (2009).
37. E. W. Bogaart, R. Nötzel, Q. Gong, J. E. M. Haverkort, and J. H. Wolter, "Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region," Appl. Phys. Lett. 86(17), 173109 (2005).
38. M. Gioannini and I. Montrosset, "Numerical analysis of the frequency chirp in quantum-dot semiconductor lasers," IEEE J. Quantum Electron. 43(10), 941-949 (2007).