Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Infrared Physics and Technology

Volumn 47, Issue 3, 2006, Pages 257-262

  Zhang, Yonggang ^a   Gu, Yi ^a   Zhu, Cheng ^a   Hao, Guoqiang ^a   Li, Aizhen ^a   Liu, Tiandong ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

III V compounds; Molecular beam epitaxy; Photodetectors; Short wavelength infrared

Indexed keywords

ACTIVATION ENERGY; MOLECULAR BEAM EPITAXY; RADIATION DETECTORS;

HOMO-JUNCTION; III-V COMPOUNDS; ROOM TEMPERATURE; SHORWAVELENGTH INFRARED;

PHOTODETECTORS;

EID: 28044465996     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2005.02.031     Document Type: Article

References (10)

1. R.W.M. Hoogeveen, R.J. van der A, and A.P.H. Goede Extended wavelength InGaAs infrared (1.0-2.4 μm) detector arrays on SCIAMACHY for space-based spectrometer of the earth atmosphere Infrared Phys. Technol. 42 2001 1 16
2. K. Makita, T. Torikai, H. Ishihara, and K. Taguchi GaInAs/InAsP pin photodiode for long wavelength region (λ > 2 μm) grown by hydride vapor phase epitaxy Electron. Lett. 24 1988 379 380
3. R.U. Martinelli, T.J. Zamerowski, and P.A. Longeway 2.6 μm InGaAs photodiodes Appl. Phys. Lett. 53 1988 989 991
4. K.R. Linga, G.H. Olsen, V.S. Ban, A.M. Joshi, and W.F. Kosonocky Dark current analysis and characterization of InGaAs/InAsP graded photodiodes with x > 0.53 for response to longer wavelength (>1.7 μm) IEEE J. Lightwave Technol. 10 1992 1050 1055
5. M.A. di Forte-Poisson, C. Brylinski, J. di Persio, X. Hugon, B. Vilotitch, and C. Le Noble GaInAs/InAsP/InP photodiode for the 1.6-2.4 μm spectral region grown by low pressure MOCVD J. Crystal Growth 124 1992 782 791
6. M. Wada, and H. Hosomatsu Wide wavelength and low dark current lattice mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy Appl. Phys. Lett. 64 1994 1265 1267
7. M. D'Hondt, I. Moerman, P.V. Daele, and P. Demeester Influence of buffer layer and processing on the dark current of 2.5 μm wavelength 2% mismatched InGaAs photodetector IEE Proc. Optoelectron. 144 1997 277 282
8. M. D'Hondt, I. Moerman, P.V. Daele, and P. Demeester Dark current optimization for MOVPE grown 2.5 μm wavelength InGaAs photodetectors Electron. Lett. 34 1998 910 912
9. L. Zimmermann, J. John, S. Degroote, G. Borghs, C. Van Hoof, and S. Nemeth Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors Appl. Phys. Lett. 82 2003 2838 2840
10. J. John, L. Zimmermann, P. Merken, S. Degroote, G. Borghs, C. Van Hoof, S. Nemeth, and T. Colin Extended-wavelength InGaAs on GaAs hybrid image sensors Proc. SPIE 5152 2003 263 270