Noise in submicron metal-oxide-semiconductor field effect transistors: Lateral electron density distribution and active trap position

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 1, 2012, Pages

  Sedlakova, Vlasta ^a   Sikula, Josef ^a   Chvatal, Milos ^a   Pavelka, Jan ^a   Tacano, Munecazu ^b   Toita, Masato ^c  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b MEISEI UNIVERSITY   (Japan)

^c Asahi Kasei Microsystems   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE TIME; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DIFFUSION CURRENTS; DRAIN CONTACTS; DRAIN ELECTRODES; DRIFT CURRENTS; ELECTRON CONCENTRATION; GATE VOLTAGES; LATERAL ELECTRIC FIELD; MAXIMUM VALUES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MINIMUM VALUE; N-CHANNEL DEVICES; SUBMICRON; TRAP POSITIONS; TWO-COMPONENT;

TELEGRAPH;

ELECTRIC FIELDS;

EID: 84857270436     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.024105     Document Type: Article

References (27)

1. M. J. Kirton and M. J. Uren: Adv. Phys. 38 (1989) 367.
2. M. Schulz: Microelectron. Eng. 40 (1998) 113.
3. A. Ohata and A. Toriumi: Jpn. J. Appl. Phys. 38 (1999) 2473.
4. T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 49 (2010) 04DC06.
5. T. Contaret, K. Romanjek, T. Boutchacha, G. Ghibaudo, and F. Buf: Solid-State Electron. 50 (2006) 63.
6. J. Jomaah, F. Balestra, and G. Ghibaudo: J. Telecommun. Inf. Technol. 1 (2005) 24.
7. L. K. J. Vandamme: in Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, ed. J. Sikula and M. Levinshtein (Kluwer, Dordrecht, 2004) NATO Science Series II, Vol. 151, p. 109.
8. N. V. Amarasinghe, Z. Celik-Butler, A. Zlotnicka, and F. Wang: Solid- State Electron. 47 (2003) 1443.
9. N. V. Amarasinghe, Z. Celik-Butler, and P. Vasina: Microelectron. Reliab. 40 (2000) 1875.
10. N. Lukyanchikova, M. Petricuk, N. Garbar, E. Simoen, and C. Claeys: Microelectron. Reliab. 38 (1998) 1561.
11. E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, and M. Sampietro: Phys. Lett. A 370 (2007) 491.
12. M. A. Negara, N. Goel, D. Bauza, G. Ghibaudo, and P. K. Hurley: Microelectron. Eng. 88 (2011) 1095.
13. T. Boutchacha and G. Ghibaudo: IEEE Trans. Electron Devices 58 (2011) 3156.
14. G. Ghibaudo and T. Boutchacha: Microelectron. Reliab. 42 (2002) 573.
15. P. Llinares, G. Ghibaudo, and J. Chroboczek: J. Appl. Phys. 82 (1997) 2676.
16. G. Ghibaudo: Microelectron. Eng. 39 (1997) 31.
17. K. Romanjek, G. Ghibaudo, T. Ernst, and J. Chroboczek: Fluctuations Noise Lett. 4 (2004) 309.
18. C. Surya and T. Y. Hsiang: Phys. Rev. B 35 (1987) 6343.
19. Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang, and C. K. Wang: Jpn. J. Appl. Phys. 45 (2006) 3405.
20. A. Ohata and A. Toriumi: Jpn. J. Appl. Phys. 42 (2003) 1552.
21. H. Lee, Y. Toon, S. Cho, and H. Shin: IEICE Trans. Electron. E90-C (2007) 968.
22. S. Yang, H. Lee, and H. Shin: Jpn. J. Appl. Phys. 47 (2008) 2606.
23. D. Kang, J. Kim, D. Lee, B. G. Park, J. D. Lee, and H. Shin: Jpn. J. Appl. Phys. 48 (2009) 04C034.
24. J. Pavelka, J. Sikula, M. Tacano, and M. Toita: Radioengineering 20 (2011) 194.
25. S. M. Sze and K. K. Ng: Physics of Semiconductor Devices (Wiley, Hoboken, NJ, 2007) 3rd ed., p. 293.
26. M. B. Barron: Solid-State Electron. 15 (1972) 293.
27. W. M. Gosney: IEEE Trans. Electron Devices 19 (1972) 213.