Photoluminescence and raman study of well-aligned ZnO nanorods on p-si substrate

Journal of Nanoelectronics and Optoelectronics

Volumn 6, Issue 4, 2011, Pages 473-477

  Ursaki, V V ^a   Lupan, O ^b,c   Tiginyanu, I M ^d   Chai, G ^c   Chow, L ^c  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

^d INSTITUTE OF CHEMISTRY   (Moldova)

Author keywords

Electric Field Assisted Growth; Photoluminescence Properties; Self Assembly; ZnO Nanorod Arrays

Indexed keywords

ASSEMBLY TECHNIQUES; CRYSTALLINE QUALITY; ELECTRIC-FIELD ASSISTED GROWTH; FREE CARRIER CONCENTRATION; HIGH-CRYSTALLINE QUALITY; LOW TEMPERATURES; MICRO-RAMAN STUDIES; P-TYPE SI; PHOTOLUMINESCENCE PROPERTIES; RAMAN STUDIES; WELL-ALIGNED; ZNO NANOROD; ZNO NANOROD ARRAYS;

CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; NANORODS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SUBSTRATES; ZINC OXIDE;

QUALITY CONTROL;

EID: 84857204180     PISSN: 1555130X     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2011.1198     Document Type: Article

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