Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods

Solid State Communications

Volumn 143, Issue 8-9, 2007, Pages 437-441

  Ursaki, V V ^a   Lupan, O I ^b,c   Chow, L ^c   Tiginyanu, I M ^a   Zalamai, V V ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

A. Semiconductors; B. Chemical synthesis; E. Inelastic light scattering; E. Luminescence

Indexed keywords

CHEMICAL DEPOSITION METHOD; INELASTIC LIGHT SCATTERING; RESONANT RAMAN SCATTERING (RRS);

LUMINESCENCE; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); ZINC OXIDE;

NANORODS;

EID: 34447627000     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.001     Document Type: Article

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