Hydrogenated Ge nanocrystals: Band gap evolution with increasing size

Brazilian Journal of Physics

Volumn 36, Issue 2 A, 2006, Pages 375-378

  Alfaro, P ^a   Miranda, A ^a   Ramos, A E ^a   Cruz Irisson, M ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

Electronic band structure; Empirical tight binding; Ge quantum wires

Indexed keywords

EID: 33746120771     PISSN: 01039733     EISSN: 01039733     Source Type: Journal    
DOI: 10.1590/S0103-97332006000300038     Document Type: Conference Paper

References (15)

1. Tight-Binding Approach to Computational Materials Science, edited by P.E.A. Turchi, A. Gonis, and L. Colombo, MRS Symposia Proceedings 491, Materials Research Society, Warrendale, PA, 1998.
2. H. Yorikawa, T. Sato, and S. Muramatsu, Phys. Rev. B 95, 3569 (2004).
3. J.R. Heath, J.J. Shiang, and A.P. Alivisatos, J. Chem. Phys. 101, 1607 (1994).
4. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 58, 7921(1998).
5. M.V. Wolkin et al., Phys. Rev. Lett. 82, 197 (1999).
6. S. Louhibi, N. Sekkal, N. Benkhettou, and N.B. Chabane-Sari, Superlattices and Microstructures 37, 115 (2005).
7. S.S. Iyer and Y.H. Xie, Science 260, 40 (1993).
8. D. Guzmán, U.Corona, and M. Cruz, J. Lumin. 102, 487 (2003).
9. J. Koga et al., J. Non-Cryst. Solids 293-295, 630 (2001).
10. J. Koga, K. Nishio, F. Yonezawa, and T. Yamaguchi, Phys. E 15, 182 (2002).
11. H.-Ch. Weissker, J. Furthmüller, and F. Bechstedt, Surf. Sci. 566-568, 961 (2004).
12. P. Vogl, H.P. Hjalmarson, and J.D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
13. M. Palummo, G. Onida, and R. Del Sole, Phys. Stat. Sol. (a) 175, 23 (1999).
14. M. Palummo et al., Phys. Stat. Sol. (b) 224, 247 (2001).
15. DMOL User Guide, Molecular Simulation, San Diego, 1996.