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Optics Communications

Volumn 260, Issue 1, 2006, Pages 337-339

The photodetector of Ge nanocrystals/Si for 1.55 μm operation deposited by pulsed laser deposition

(3) Ma, Xiying a Yuan, Baohe a Yan, Zhijun a

a SHAOXING COLLEGE OF ARTS AND SCIENCES (China)

Author keywords

Ge nanocrystals; Near infrared photodetector; Photocurrent; Responsivity

Indexed keywords

GERMANIUM; LIGHT ABSORPTION; PHOTOCURRENTS; PHOTODETECTORS; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING;

GE NANOCRYSTALS; NEAR INFRARED DETECTORS; RESPONSIVITY;

NANOSTRUCTURED MATERIALS;

EID: 33644648571 PISSN: 00304018 EISSN: None Source Type: Journal
DOI: 10.1016/j.optcom.2005.10.037 Document Type: Article

Times cited : (10)

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