On morphology and strain field of Ge/Si(001) islands according to TEM phase imaging method

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 10, 2011, Pages 9208-9214

  Donnadieu, P ^a   Neisius, T ^b   Amiard, G ^c   Gouye A ^c   Ronda, A ^c   Berbezier, I ^c  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

^c CNRS   (France)

Author keywords

Composition; Heteroepitaxy; Morphology; SiGe Nanostructure; Strain; Transmission Electron Microscopy

Indexed keywords

FOCUS SERIES; GE CONCENTRATIONS; GERMANIUM ISLANDS; MAXIMUM COMPRESSIVE STRAIN; OPTOELECTRONIC APPLICATIONS; PHASE IMAGE; PHASE IMAGING; SIZE AND SHAPE; STRAIN FIELDS; TRANSMISSION ELECTRON;

CHEMICAL ANALYSIS; DOMES; EPITAXIAL GROWTH; GERMANIUM; MORPHOLOGY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

TENSILE STRAIN;

EID: 84857162186     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4291     Document Type: Conference Paper

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