Pit formation on the Ge (1 0 0) surfaces by normal incident Si - ion implantation

Applied Surface Science

Volumn 258, Issue 9, 2012, Pages 4129-4134

  Mollick, S A ^a   Karmakar, S ^a   Metya, A ^a   Ghose, D ^a  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

Ge; Morphology; Pit formation; Si ion implantation; Simulation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CONTINUUM MECHANICS; ENERGY DISPERSIVE X RAY ANALYSIS; GERMANIUM; ION BEAMS; ION IMPLANTATION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY;

CHEMICAL INFORMATION; CIRCULAR STRUCTURES; CONTINUUM MODELING; EROSION MECHANISMS; PIT FORMATION; SI ION IMPLANTATIONS; SIMULATION; SMALL SLOPE APPROXIMATION;

ION BOMBARDMENT;

EID: 84857063404     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.08.092     Document Type: Conference Paper

References (30)

1. J.W. Mayer, L. Eriksson, and J.A. Davies Ion Implantation in Semiconductors 1970 Academic Press New York
2. G. Dearnaley, J.H. Freeman, R.S. Nelson, and J. Stephen Ion Implantation 1973 North-Holland Amsterdam
3. H. Rysell, and H. Glawischnig Ion Implantation Techniques 1982 Springer-Verlag Berlin
4. Sufian Abedrabbo, D.-E. Arafah, and S.A. Salem J. Electron. Mater. 34 2005 468
5. J. Weber, and M.I. Alonso Phys. Rev. B 40 1989 5683
6. Yu.N. Parkhomenko, A.I. Belogorokhov, N.N. Gerasimenko, A.V. Irzhak, and M.G. Lisachenko Semiconductors 38 2004 572
7. J. Muñoz-García, L. Vázquez, R. Cuerno, J.A. Sánchez-García, M. Castro, and R. Gago Z. Wang, Lecture Notes on Nanoscale Science and Technology 5 2009 Springer New York
8. W.L. Chan, and E. Chason J. Appl. Phys. 101 2007 121301
9. D. Ghose J. Phys. Condens. Matter 21 2009 224007
10. C. Hofer, S. Abermann, C. Teichert, T. Bobek, H. Kurz, K. Lyutovich, and E. Kasper Nucl. Instrum. Methods B 216 2004 178
11. R.M. Bradley, and J.M.E. Harper J. Vac. Sci. Technol. A 6 1988 2390
12. J. Muñoz-García, M. Castro, and R. Cuerno Phys. Rev. Lett. 96 2006 086101
13. S. Facsko, T. Bobek, A. Stahl, H. Kurtz, and T. Dekorsy Phys. Rev. B 69 2004 153412(R)
14. Q. Wei, X. Zhou, B. Joshi, Y. Chen, Kun-Dar Li, Q. Wei, K. Sun, and L. Wang Adv. Mater. 21 2009 2865
15. G. Ozaydin, K.F. Ludwig Jr., H. Zhou, and R.L. Headrick J. Vac. Sci. Technol. B 26 2008 551
16. J. Tersoff Phys. Rev. B 39 1989 5566
17. F. Bechstedt, and W.A. Harrison Phys. Rev. B 39 1989 5041
18. J.F. Ziegler IBM Research, SRIM-2000.40 (PC version) 1999 Yorktown Heights NY
19. N.V. Medhekar, W.L. Chan, V.B. Shenoy, and E. Chason J. Phys. Condens. Matter 21 2009 224021
20. C.H. Lam, and F.G. Shin Phys. Rev. E 58 1998 5592
21. Q. Wei, J. Lian, L.A. Boatner, L.M. Wang, and R.C. Wing Phys. Rev. B 80 2009 085413
22. J. Völlner, B. Ziberi, F. Frost, and B. Rauschenbach J. Appl. Phys. 109 2011 043501
23. M.J. Nobes, J.S. Colligon, and G. Carter J. Mater. Sci. 4 1969 730
24. A.D.G. Stewart, and M.W. Thompson J. Mater. Sci. 4 1969 56
25. A.R. Bayly J. Mater. Sci. 7 1972 404
26. O. Auciello, R. Kelly, and R. Iricibar Radiat. Eff. 46 1980 105
27. R.J. Borg, and G.J. Dienes An Introduction to Solid State Diffusion 1988 Academic Press London
28. H.H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E.E. Haller Semicond. Sci. Technol. 21 2006 758
29. M. Werner, H. Mehrer, and H.D. Hochheimer Phys. Rev. B 32 1985 3930
30. L. Huang, F. Liu, G.-H. Lu, and X.G. Gong Phys. Rev. Lett. 96 2006 016103