ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

Solid-State Electronics

Volumn 69, Issue , 2012, Pages 27-30

  Hyung, Gun Woo ^a   Park, Jaehoon ^b   Koo, Ja Ryong ^a   Choi, Kyung Min ^c   Kwon, Sang Jik ^c   Cho, Eou Sik ^c   Kim, Yong Seog ^a   Kim, Young Kwan ^a  

^a Hong Ik University   (South Korea)

^b DURHAM UNIVERSITY   (United Kingdom)

^c Gachon University   (South Korea)

Author keywords

Atomic layer deposition (ALD); Plastic substrate; Polymeric insulator; Thin film transistor; Zinc oxide

Indexed keywords

BAND GAP ENERGY; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HEXAGONAL STRUCTURES; PLASTIC SUBSTRATE; POLYCRYSTALLINE; POLYETHERSULFONES; POLYMERIC INSULATORS; POSITIVE GATE BIAS; THRESHOLD VOLTAGE SHIFTS; TRAPPED ELECTRONS; ZNO; ZNO FILMS;

ATOMIC LAYER DEPOSITION; ETHERS; METALLIC FILMS; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

INTERFACES (MATERIALS);

EID: 84857051519     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.12.001     Document Type: Article

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