Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Devynck, Mélanie ^a,b   Tardy, Pascal ^a,b   Wantz, Guillaume ^a,b   Nicolas, Yohann ^a   Vellutini, Luc ^a   Labrugère, Christine ^c   Hirsch, Lionel ^a,b  

^a UNIVERSITÉ DE BORDEAUX   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CUMULATIVE EFFECTS; DIELECTRIC SURFACE; GOLD CONTACTS; HIGH MOBILITY; HOLE INJECTION BARRIERS; INTERFACIAL TRAPS; LOW SURFACE ENERGY; NON-POLAR; PENTACENES; TRANSFER CURVES;

FIELD EFFECT TRANSISTORS; SELF ASSEMBLED MONOLAYERS;

GOLD COATINGS;

EID: 84857017514     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681791     Document Type: Article

References (33)

1. M. Kiguchi, M. Nakayama, T. Shimada, and K. Saiki, Phys. Rev. B 71, 1 (2005).
2. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. De Leeuw, Phys. Rev. Lett. 92, 90 (2004). 10.1103/PhysRevLett.92.116802
3. G. Horowitz, P. Lang, W. Kalb, and M. Mottaghi, in Proceedings of the International Symposium on Super-Functionality Organic Devices IPAP Conference Series (The Institute of Pure and Applied Physics, Chiba, Japan, 2005), Vol. 6, pp. 125-129.
4. S. Steudel, S. De Vusser, S. De Jonge, D. Janssen, S. Verlaak, J. Genoe, and P. Heremans, Appl. Phys. Lett. 85, 4400 (2004). 10.1063/1.1815042
5. S. E. Fritz, T. W. Kelley, and C. D. Frisbie, J. Phys. Chem. B 109, 10574 (2005). 10.1021/jp044318f
6. J. Veres, S. Ogier, G. Lloyd, and D. De Leeuw, Chem. Mater. 16, 4543 (2004). 10.1021/cm049598q
7. J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. Mohialdin Khaffaf, Adv. Funct. Mater. 13, 199 (2003). 10.1002/adfm.200390030
8. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000). 10.1063/1.373091
9. I. G. Hill, C. M. Weinert, L. Kreplak, and B. P. Zyl, Appl. Phys. A 95, 81 (2008). 10.1007/s00339-008-4992-2
10. S. Y. Yang, K. Shin, and C. E. Park, Adv. Funct. Mater. 15, 1806 (2005). 10.1002/adfm.200400486
11. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997). 10.1109/55.644085
12. K. Suemori, S. Uemura, M. Yoshida, S. Hoshino, N. Takada, T. Kodzasa, and T. Kamata, Appl. Phys. Lett. 91, 192112 (2007). 10.1063/1.2812573
13. S. Steudel, D. Janssen, S. Verlaak, J. Genoe, and P. Heremans, Appl. Phys. Lett. 85, 5550 (2004). 10.1063/1.1832732
14. N. Koch, Chem. Phys. Chem. 8, 1438 (2007). 10.1002/cphc.200700177
15. N. Koch, A. Kahn, J. Ghijsen, J.-J. Pireaux, J. Schwartz, R. L. Johnson, and A. Elschner, Appl. Phys. Lett. 82, 70 (2003). 10.1063/1.1532102
16. P. Marmont, N. Battaglini, P. Lang, G. Horowitz, J. Hwang, A. Kahn, C. Amato, and P. Calas, Org. Electron. 9, 419 (2008). 10.1016/j.orgel.2008.01.004
17. I. H. Campbell, J. D. Kress, R. L. Martin, and D. L. Smith, Appl. Phys. 71, 3528 (1997).
18. B. De Boer, A. Hadipour, M. M. Mandoc, T. Van Woudenbergh, and P. W. M. Blom, Adv. Mater. 17, 621 (2005). 10.1002/adma.200401216
19. K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. De Boer, J. Mater. Chem. 17, 1947 (2007). 10.1039/b617995a
20. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003). 10.1016/S0038-1101(02)00204-6
21. A. N. Parikh, D. L. Allara, I. B. Azouz, and F. Rondelez, J. Phys. Chem. 98, 7577 (1994). 10.1021/j100082a031
22. D. K. Owens and R. C. Wendt, J. Appl. Polym. Sci. 13, 1741 (1969). 10.1002/app.1969.070130815
23. S. K. Park, T. N. Jackson, J. E. Anthony, and D. A. Mourey, Appl. Phys. Lett. 91, 063514 (2007). 10.1063/1.2768934
24. W. R. Salaneck, M. Logdlund, M. Fahlman, G. Greczynski, and T. Kugler, Mater. Sci. 34, 121 (2001).
25. G. Gu, M. G. Kane, J. E. Doty, and A. H. Firester, Appl. Phys. Lett. 87, 243512 (2005). 10.1063/1.2146059
26. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. 3, 193 (2003). 10.1021/nl0259232
27. S. Kim, H. Yang, S. Yang, K. Hong, D. Choi, C. Yang, D. Chung, and C. Park, Org. Electron. 9, 673 (2008). 10.1016/j.orgel.2008.05.004
28. J. C. Ribierre, S. Ghosh, K. Takaishi, T. Muto, and T. Aoyama, J. Phys. D 44, 205102 (2011). 10.1088/0022-3727/44/20/205102
29. G. Robert, V. Derycke, M. F. Goffman, S. Lenfant, D. Vuillaume, and J.-P. Bourgoin, Appl. Phys. Lett. 93, 143117 (2008). 10.1063/1.2992586
30. G. Horowitz and M.E. Hajlaoui, Synth. Met. 122, 185 (2001). 10.1016/S0379-6779(00)01351-5
31. S. Y. Yang, K. Shin, and C. E. Park, Adv. Funct. Mater. 15, 1806 (2005). 10.1002/adfm.200400486
32. J. Park, J.-H. Bae, W.-H. Kim, S.-D. Lee, J. S. Gwag, D. W. Kim, J. C. Noh, and J. S. Choi, Solid-State Electron. 54, 1650 (2010). 10.1016/j.sse.2010. 08.004
33. D. H. Dinh, L. Vellutini, B. Bennetau, C. Dejous, D. Rebire, E. Pascal, D. Moynet, C. Belin, B. Desbat, C. Labrugre, and J.-P. Pillot, Langmuir 25, 5526 (2009). 10.1021/la804088d