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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 528-535

Fabrication and characterization of novel silicon-compatible high-density capacitors

(4) Sharma, Himani a Sethi, Kanika a Raj, P Markondeya a Tummala, Rao a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D STRUCTURES; ALUMINA DIELECTRIC; CAPACITANCE DENSITY; CAPACITANCE VOLTAGE; CAPACITOR STRUCTURES; COMPONENT DENSITY; COMPONENT TECHNOLOGIES; CONFORMAL DEPOSITION; CONFORMALITY; COUNTER ELECTRODES; CURRENT-VOLTAGE CHARACTERIZATION; DEFECT-FREE; HIGH-DENSITY; LEAKAGE PROPERTY; NANO-ELECTRODES; PARTICULATE ELECTRODE; PLANAR DEVICES; PROOF OF CONCEPT; SURFACE AREA; SYSTEM COMPONENTS; SYSTEM INTEGRATION; VOLTAGE RANGES; VOLUMETRIC EFFICIENCY;

ALUMINA; ATOMIC LAYER DEPOSITION; COPPER; COPPER COMPOUNDS; DIELECTRIC PROPERTIES; ELECTRODES; INTEGRATION; THIN FILMS; THREE DIMENSIONAL; VAPOR DEPOSITION;

CAPACITORS;

EID: 84856721745 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0431-9 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.