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Journal of Alloys and Compounds

Volumn 519, Issue , 2012, Pages 55-59

Structural and electronic properties of Ga 1-xIn x As 1-yN y quaternary semiconductor alloy on GaAs substrate

(3) Aslan, Metin a Yalin, Battal G a Üstünda, Mehmet a

a SAKARYA UNIVERSITY (Turkey)

Author keywords

Alloy; GaInAsN; III N V heterostructure

Indexed keywords

BAND GAP ENERGY; DIRECT BAND GAP; EXPERIMENTAL STUDIES; FIRST-PRINCIPLES; GAAS; GAAS SUBSTRATES; GAINASN; III-N-V; INAS; PSEUDO-POTENTIAL TECHNIQUES; QUATERNARY SEMICONDUCTORS; SEMI-CONDUCTOR ALLOYS; TERNARY SEMICONDUCTORS; ZINC-BLENDE;

ALLOYS; CERIUM ALLOYS; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; INDIUM ARSENIDE; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM;

ELECTRONIC PROPERTIES;

EID: 84856708534 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.12.020 Document Type: Article

Times cited : (30)

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