GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 457-465

  Calvez, S ^a   Hopkins, J M ^a   Smith, S A ^a   Clark, A H ^a   Macaluso, R ^a   Sun, H D ^a   Dawson, M D ^a   Jouhti, T ^b   Pessa, M ^b   Gundogdu, K ^c   Hall, K C ^c   Boggess, T F ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c UNIVERSITY OF IOWA   (United States)

Author keywords

B1. Dilute nitrides; B2. Semiconducting III V materials; B2. Semiconducting quaternary alloys; B3. Solid state lasers; B3. Vertical cavity devices; B3. Vertical cavity surface emitting lasers

Indexed keywords

CONTINUOUS WAVE LASERS; MIRRORS; NEODYMIUM LASERS; OPTICAL PUMPING; OXIDATION; SEMICONDUCTOR LASERS;

THERMAL OXIDATION; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3142768386     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.072     Document Type: Conference Paper

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