Evidence of the correlation between a strong 4d-As/2p-N orbitals coupling and the bowing effect in GaAsN

Physica B: Condensed Matter

Volumn 403, Issue 23-24, 2008, Pages 4281-4287

  Mehnane, Noureddine ^a   Badi, Fouzia ^a   Aced, Mohammed Reda ^a   Abid, Hamza ^a   Sekkal, Nadir ^a,b,c  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b NATIONAL POLYTECHNIC SCHOOL OF ORAN   (Algeria)

^c ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

Author keywords

GaAsN semiconductor compounds; III V semiconductors; Superlattices

Indexed keywords

ELECTRIC CONDUCTIVITY; SEMICONDUCTOR MATERIALS; TIN; TITANIUM COMPOUNDS; VANADIUM COMPOUNDS;

ADJUSTABLE PARAMETERS; BOWING EFFECTS; FIRST PRINCIPLES; GAASN SEMICONDUCTOR COMPOUNDS; III-V SEMICONDUCTORS; MICROSCOPIC STUDIES; PLANE WAVES;

SEMICONDUCTOR SUPERLATTICES;

EID: 56749182092     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.09.019     Document Type: Article

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