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Volumn 496, Issue 1-2, 2010, Pages 226-233

Ab-initio investigation of structural, electronic and optical properties of InxGa1-xAs, GaAs1-yPy ternary and InxGa1-xAs1-yPy quaternary semiconductor alloys

Author keywords

Electronic properties; Optical properties; Semiconductor alloys

Indexed keywords

AB INITIO; BAND GAP ENERGY; BULK MODULUS; DENSITY OF STATE; DIELECTRIC FUNCTIONS; ENERGY LOSS FUNCTION; EXPERIMENTAL DATA; FIRST-PRINCIPLES; GAAS; LATTICE PARAMETERS; LDA APPROXIMATIONS; OPTICAL PARAMETER; PLANE-WAVE PSEUDO-POTENTIAL; QUATERNARY SEMICONDUCTORS; SEMI-CONDUCTOR ALLOYS;

EID: 77950865593     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.12.109     Document Type: Review
Times cited : (36)

References (46)
  • 28
    • 84966466676 scopus 로고
    • Semiconductors: Physics of Group IV Elements and III-V Alloys, New Series
    • K.H. Hellwege, O. Madelung, Landolt-Bornstein. Semiconductors: Physics of Group IV Elements and III-V Alloys, New Series, Group III, (1982), 17.
    • (1982) Group , vol.3 , pp. 17
    • Hellwege, K.H.1    Madelung, O.2    Bornstein, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.