|
Volumn 496, Issue 1-2, 2010, Pages 226-233
|
Ab-initio investigation of structural, electronic and optical properties of InxGa1-xAs, GaAs1-yPy ternary and InxGa1-xAs1-yPy quaternary semiconductor alloys
|
Author keywords
Electronic properties; Optical properties; Semiconductor alloys
|
Indexed keywords
AB INITIO;
BAND GAP ENERGY;
BULK MODULUS;
DENSITY OF STATE;
DIELECTRIC FUNCTIONS;
ENERGY LOSS FUNCTION;
EXPERIMENTAL DATA;
FIRST-PRINCIPLES;
GAAS;
LATTICE PARAMETERS;
LDA APPROXIMATIONS;
OPTICAL PARAMETER;
PLANE-WAVE PSEUDO-POTENTIAL;
QUATERNARY SEMICONDUCTORS;
SEMI-CONDUCTOR ALLOYS;
ELECTRONIC PROPERTIES;
ENERGY DISSIPATION;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
INDIUM;
REFRACTIVE INDEX;
SEMICONDUCTING GALLIUM;
CERIUM ALLOYS;
|
EID: 77950865593
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2009.12.109 Document Type: Review |
Times cited : (36)
|
References (46)
|