Composition, annealing and thickness dependence of structural and optical studies on Zn1-xMnxS nanocrystalline semiconductor thin films

Materials Chemistry and Physics

Volumn 132, Issue 2-3, 2012, Pages 581-590

  El Hagary, M ^a,b   Emam Ismail, M ^a,c   Shaaban, E R ^d   Al Rashidi, A ^a   Althoyaib, S ^a  

^a QASSIM UNIVERSITY   (Saudi Arabia)

^b Helwan University   (Egypt)

^c Ain Shams University   (Egypt)

^d Assiut Branch   (Egypt)

Author keywords

Nanomaterial; Optical properties; Single oscillator parameters; XRD

Indexed keywords

ANNEALING; DISPERSION (WAVES); ENERGY DISPERSIVE X RAY ANALYSIS; ENERGY GAP; FILM THICKNESS; MAGNETIC SEMICONDUCTORS; MANGANESE; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; OPTICAL BAND GAPS; OPTICAL CONDUCTIVITY; OPTICAL PROPERTIES; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; ZINC;

ANNEALING TEMPERATURES; ELECTRON BEAM EVAPORATION; NANOCRYSTALLINE SAMPLE; NANOCRYSTALLINE SEMICONDUCTORS; SINGLE OSCILLATOR PARAMETERS; SINGLE-OSCILLATOR MODEL; STRUCTURAL INVESTIGATION; X-RAY DIFFRACTION MEASUREMENTS;

OPTICAL FILMS;

EID: 84856615035     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.11.072     Document Type: Article

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