Temperature dependence of the band-edge photoluminescence of Zn 1-xMnxSe films

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 565-570

  Hwang, Y H ^a   Um, Y H ^a   Furdyna, J K ^b  

^a University of Ulsan   (South Korea)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; HIGH TEMPERATURE EFFECTS; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING ZINC COMPOUNDS;

TEMPERATURE DEPENDENCE; THERMAL QUENCHING;

SEMICONDUCTING FILMS;

EID: 2542433203     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/002     Document Type: Article

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