High responsivity and high power UTC and MUTC GaInAs-InP photodiodes

IEEE Photonics Technology Letters

Volumn 24, Issue 4, 2012, Pages 318-320

  Chtioui, Mourad ^a   Lelarge, Francois ^b   Enard, Alain ^b   Pommereau, Frederic ^b   Carpentier, Daniele ^b   Marceaux, Alexandre ^a   Van Dijk, Frédéric ^b   Achouche, Mohand ^b  

^a THALES   (France)

^b ALCATEL THALES III V LAB   (France)

Author keywords

High power photodiodes; linearity; photodetectors; responsivity; saturation current; uni traveling carrier photodiode (UTC PD)

Indexed keywords

HIGH POWER PHOTODIODE; LINEARITY; RESPONSIVITY; SATURATION CURRENT; UNI-TRAVELING-CARRIER PHOTODIODES;

BANDWIDTH; PHOTODETECTORS; PHOTODIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84856483148     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2177965     Document Type: Article

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