High-saturation-current modified uni-traveling-carrier photodiode with cliff layer

IEEE Journal of Quantum Electronics

Volumn 46, Issue 5, 2010, Pages 626-632

  Li, Zhi ^a   Pan, Huapu ^a   Chen, Hao ^a   Beling, Andreas ^b   Campbell, Joe C ^b  

^a University of Virginia   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Photodetectors; photodiodes

Indexed keywords

3 DB BANDWIDTH; ABSORPTION REGION; BANDWIDTH PRODUCT; DOPING DENSITIES; FIGURE OF MERIT; RESPONSIVITY; SATURATION CURRENT; UNI-TRAVELING CARRIER PHOTODIODE; UNI-TRAVELING-CARRIER PHOTODIODES;

HETEROJUNCTION BIPOLAR TRANSISTORS; LANDFORMS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES;

BANDWIDTH;

EID: 77953726903     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2046140     Document Type: Article

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