A high-linearity modified uni-traveling carrier photodiode with offset effects of nonlinear capacitance

Journal of Lightwave Technology

Volumn 27, Issue 20, 2009, Pages 4435-4439

  Pan, Huapu ^a   Beling, Andreas ^a,b   Chen, Hao ^a   Campbell, Joe C ^a   Yoder, P D ^c  

^a University of Virginia   (United States)

^b U2T PHOTONICS AG   (Germany)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

InGaAs; Linearity; Nonlinear capacitance; Nonlinear responsivity; Photodiode (PD); Third order intermodulation distortion

Indexed keywords

INGAAS; LINEARITY; NONLINEAR CAPACITANCE; NONLINEAR RESPONSIVITY; THIRD-ORDER INTERMODULATION DISTORTION;

CAPACITANCE; DISTORTION (WAVES); INTERMODULATION DISTORTION; INTERMODULATION MEASUREMENT; LINEARIZATION; PHOTOCURRENTS; SEMICONDUCTING INDIUM; SUPERCONDUCTING FILMS;

PHOTODIODES;

EID: 70049088997     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2009.2024168     Document Type: Article

References (10)

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