Pressure-induced structural phase transition in the IV-VI semiconductor SnS

Journal of Physics Condensed Matter

Volumn 16, Issue 21, 2004, Pages 3545-3554

  Ehm, L ^a,b   Knorr, K ^a   Dera, P ^b   Krimmel, A ^c   Bouvier, P ^d   Mezouar, M ^d  

^a UNIVERSITY OF KIEL   (Germany)

^b GEOPHYSICAL LABORATORY   (United States)

^c UNIVERSITY OF AUGSBURG   (Germany)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANISOTROPY; DIFFRACTION; ELLIPSOMETRY; EQUATIONS OF STATE; ISOMERS; LATTICE CONSTANTS; MOSSBAUER SPECTROSCOPY; OPTOELECTRONIC DEVICES; PHASE TRANSITIONS;

BRILLOUIN ZONES; FERRO-ELASTIC TRANSITION; FRACTIONAL COORDINATES; SYNCHROTRON POWDER DIFFRACTION;

SEMICONDUCTING TIN COMPOUNDS;

EID: 2942586877     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/21/004     Document Type: Article

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