Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si:H

Journal of Physics Condensed Matter

Volumn 13, Issue 48, 2001, Pages 10969-10977

  Merazga, A ^a   Meftah, A F ^a   Meftah, A M ^a   Main, C ^b   Reynolds, S ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL DEFECTS; DECOMPOSITION; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORMS; MATHEMATICAL MODELS; PHOSPHORUS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING;

CONDUCTION BAND TAIL; CONDUCTION MOBILITY; DANGLING BOND DEFECT DISTRIBUTION; DEFECT POOL MODEL; DENSITY OF STATES; POWER LAW DECAY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035803569     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/48/321     Document Type: Article

References (18)

1. Optoelectronic properties of amorphous semiconductors