Comprehensive model for interface recombination at a-Si:H/c-Si interfaces based on amphoteric defects

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 276-279

  Steingrube, S ^a,b   Steingrube, D S ^c   Brendel, R ^a,b   Altermatt, P P ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c INSTITUT FÜR QUANTENOPTIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ACCURATE MODELING; AMPHOTERIC NATURE; C-SI SOLAR CELL; CELL DESIGN; CELL DEVELOPMENT; CELL PERFORMANCE; COMPREHENSIVE MODEL; CRYSTALLINE SILICONS; DEFECT STATE; DENSITY OF DEFECTS; ELECTRONIC PASSIVATION; EXPERIMENTAL DATA; HETERO INTERFACES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE RECOMBINATION; NUMERICAL COMPARISON; PHYSICAL MODEL; PHYSICAL PARAMETERS; RECOMBINATION MODEL; SURFACE PASSIVATION;

AMORPHOUS SILICON; DEFECT DENSITY; DEFECTS; NANOSCIENCE; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954342823     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982486     Document Type: Conference Paper

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