SCOPUS 정보 검색 플랫폼

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3613-3616

An experimental study of band gap states electrical properties in poly-Si TFTs by the analysis of the transient currents

(4) Michalas, L a Papaioannou, G J a Kouvatsos, D N b Voutsas, A T c

a UNIVERSITY OF ATHENS (Greece)

b INSTITUTE OF MICROELECTRONICS (Greece)

c SHARP LABORATORIES OF AMERICA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DENSITY OF STATES; ELECTRICAL PROPERTIES; EXPERIMENTAL STUDIES; POLYCRYSTALLINE SILICON THIN FILMS; SILICON BAND GAPS; SIMULTANEOUS ANALYSES; THEORETICAL MODELS; TRANSFER CHARACTERISTICS; TRANSIENT CURRENTS;

ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM ALLOYS; NANOTECHNOLOGY; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

NANOELECTRONICS;

EID: 57349163123 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200780166 Document Type: Conference Paper

Times cited : (4)

References (12)

1
- 33744546859
- M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne Phys. Rev. B 45, 4160 (1992).
- (1992) Phys. Rev. B , vol.45 , pp. 4160
- Powell, M.J.¹ van Berkel, C.² Franklin, A.R.³ Deane, S.C.⁴ Milne, W.I.⁵

2
- 0036732207
- P. P. Altermatt and G. Heiser, J. Appl. Phys. 92, 2561 (2002).
- (2002) J. Appl. Phys , vol.92 , pp. 2561
- Altermatt, P.P.¹ Heiser, G.²

3
- 0037475031
- F. Yan, P. Migliorato, and T. Shimoda, Appl, Phys. Lett. 82, 2062 (2003).
- F. Yan, P. Migliorato, and T. Shimoda, Appl, Phys. Lett. 82, 2062 (2003).

4
- 33646126277
- F. Yan, P. Migliorato, and R. Ishihara, Appl. Phys. Lett. 88, 153507 (2006).
- (2006) Appl. Phys. Lett , vol.88 , pp. 153507
- Yan, F.¹ Migliorato, P.² Ishihara, R.³

5
- 0013066316
- N. Bavidge, M. Boero, P. Migliorato, and T. Shimoda, Appl. Phys. Lett. 77, 3836 (2000).
- (2000) Appl. Phys. Lett , vol.77 , pp. 3836
- Bavidge, N.¹ Boero, M.² Migliorato, P.³ Shimoda, T.⁴

6
- 31744446392
- M. Exarchos, G. J. Papaioannou D. N. Kouvatsos, and A.T. Voutsas, J. Appl. Phys., 024511 (2006).
- M. Exarchos, G. J. Papaioannou D. N. Kouvatsos, and A.T. Voutsas, J. Appl. Phys., 024511 (2006).

7
- 39049164756
- L. Michalas, G. J. Papaioannou, D.N. Kouvatsos, and A.T. Voutsas, Solid State Electron. 52, 394 (2008).
- (2008) Solid State Electron , vol.52 , pp. 394
- Michalas, L.¹ Papaioannou, G.J.² Kouvatsos, D.N.³ Voutsas, A.T.⁴

8
- 0000897114
- R. S. Sposili and J. S. Im, Appl. Phys. Lett. 69, 2864 (1996).
- (1996) Appl. Phys. Lett , vol.69 , pp. 2864
- Sposili, R.S.¹ Im, J.S.²

9
- 35648963614
- L. Michalas, M. Exarchos, G. J. Papaioannou, D. N. Kouvatsos, and A. T. Voutsas, Microel. Reliab. 47, 2058 (2007).
- (2007) Microel. Reliab , vol.47 , pp. 2058
- Michalas, L.¹ Exarchos, M.² Papaioannou, G.J.³ Kouvatsos, D.N.⁴ Voutsas, A.T.⁵

10
- 0004071496
- J. Wiley & Sons
- D. K. Schroder, Semiconductor Material and Device Characterization (J. Wiley & Sons, 1998).
- (1998) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

11
- 0032139808
- D. Munteanu, D. A. Weiser, S. Cristoloveanu, O. Faynot, J. L. Pelloie, and J. G. Fossum, IEEE Trans. Electron Devices 45, 1678 (1998).
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1678
- Munteanu, D.¹ Weiser, D.A.² Cristoloveanu, S.³ Faynot, O.⁴ Pelloie, J.L.⁵ Fossum, J.G.⁶

12
- 0000321125
- Y. F. Chen and S. F. Huang, Phys. Rev. B 44, 13775 (1991).
- (1991) Phys. Rev. B , vol.44 , pp. 13775
- Chen, Y.F.¹ Huang, S.F.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.